Table of Contents

Technical parameters

Neuron

The following article contains technical details of communication interfaces on Neuron units, as well as the unit's storage, installation and working conditions.

Connector description

Terminal marking Meaning
+24V Power terminal - positive pole
GND Power terminal - negative pole
DI Digital input
DIGND Digital input common terminal – negative pole
DO Digital output
DOGND Digital output common terminal – negative pole
FBD Flyback diode
RO Relay output
COM Digital output common terminal – negative pole
AI Analog input
AIS Power supply of the relevant AI
AOR Analog output (voltage or current ) / resistance measurement
AOV Analog output (voltage only)
AGND Analog input/output common terminal - negative pole
RS485-A/RS485-B RS-485 communication line terminals
RS485-END Connectable terminating resistor of RS-485 communication line
ETH Ethernet port
USB USB A 2.0 port
microSD micro SD card slot

Storage, installation and working conditions

Working temperature 0 °C .. +55 °C
Rated voltage - SELV 24 V⎓ (±5%)
Power consumption Max. 12 W - 22 W depending on model
Reverse polarity protection Yes
Storage conditions Temperature: -25 °C .. +70 °C
Humidity: 10 % .. 95 %, w/o aggressive substances, condensing vapours or fog
Electric strength according to EN 60950
Ingress protection (IEC 529) IP20
Working position Vertical
Installation To a 35 mm DIN rail in an electrical distribution box
Connection Pluggable screw terminals
Wire gauge Max. 1.5 mm2 for 1-Wire
Max. 2.5 mm2 for other terminals
Terminal spacing 3.5 mm for 1-Wire
5.08 mm for other terminals
Terminal tightening torque Max. 0.4 Nm

Inputs/Outpus technical parameters

Digital inputs

Input type SINK
Input terminal DI
Common ground DIGND
Log. 0 < 3 V DC
Log. 1 > 7 V DC
Maximum voltage 35 V DC
Non-defined state 3-7 V DC
Input resistance for TRUE 6 200 Ω
Voltage drop on DI diode 1.2 V
Minimum pulse length 20 μs
0–>1 / 1–>0 delay Typ. 20 μs / 60 μs
Maximum CNT counter input frequency 10 kHz
LED indication Yes
Galvanic isolation Yes (Basic, between DI groups)
Insulation voltage (pulse) 1500 V

Digital outputs

Output type SINK (NPN - open collector)
Output terminals DO
Common ground DOGND
Switching voltage 5–50 V DC
Switching current continuous/pulse 750 mA / 1 A
Max. total group* load 1 A
Inductive load handling Integrated FBD diode (optional)
Switching period (open/close) Typ. 130 ns / 20 ns
Maximum PWM resolution 16 bits
Maximum PWM frequency 200 kHz
Galvanic isolation No
Overcurrent protection No

Relay outputs

(i)

Please note: The data below represent a selection of the most important parameters and serve only as a quick reference.

Detailed information can be found in the product datasheet provided by the relay manufacturer: FTR-F3AA024E-HA

Output type Electromechanic non-shielded relay
Output terminal RO
Common terminal COM
Contact type Normally open (SPST-NO)
Used relay type FTR-F3AA024E-HA
Maximum switching voltage 250 V AC
30 V DC
Maximum switching current 5 A
Maximum common terminal current 10 A
Short-term current overload 5 A
Mechanical lifespan 5 000 000
Electrical lifespan Up to 100 000 (according to the connected load)
Operate/release time 10 ms
Designed for load character AC-15, DC-13 (resistive)
Load handling External (RC, varistor, diode, thermistor)
Short circuit protection No
Overvoltage protection No
LED indication Yes
Galvanic isolation Yes (Basic)
Insulation voltage (pulse) 2500 V between RO and RO
4000 V between RO and all other circuits

Analog inputs

Section 1 (AI1) Sections 2,3 + some units (eg. S5xx) Section 2 (M537)
Input terminals AI AI, AIS AI
Common ground AGND AGND AGND
Input modes 0–10 V⎓ voltage meas.
0–20 mA current meas.
0–10 V⎓ voltage meas.
0–2.5 V⎓ voltage meas.
0–20 mA current meas.
0–1960 Ω resistance meas.
0–100 kΩ resistance meas.
0–10 V⎓ voltage meas.
0–2 V⎓ voltage meas.
4–20 mA current meas.
2 kΩ (75–2000 Ω) resistance meas.
20 kΩ (1–20 kΩ) resistance meas.
Maximum input voltage 12 V DC 15 V DC 15 V DC
Input resistance (voltage meas.) 66 kΩ 44 kΩ 12 kΩ ±20 % (0–10 V)
1 MΩ ±50 % (0–2 V)
Input resistance (current meas.) 100 Ω 100 Ω 100 Ω ±1 %
Accuracy ±0.5 % ±0.2 % ±0.2 % (0–10 V, 4–20 mA)
±1 % (0–2 V)
±0.3 % / 0.5 Ω (2 kΩ)
±1 % / 10 Ω (20 kΩ)
Resolution 12 bits 16 bits (voltage and current meas.)
24 bits (resistance meas.)
24 bits
Conversion time 10 μs 60 μs (voltage and current meas.)
400 ms (resistance meas.)
200 ms
Protection type Integrated overvoltage Integrated overvoltage Integrated transil
Galvanic isolation No Yes (from other sections*) Yes, 1500 V (pulse)(between AI and from other sections*)

Analog outputs

Section 1 Sections 2,3 + some units (eg. S5xx)
Output terminals AOR AOV
Common conductor AGND AGND
Output functions 0–10 V DC voltage source
0–20 mA current source
0–1960 Ω resistance meas.
0–10 V DC voltage source
Output voltage range 0-10 V DC 0-10 V DC
Output current range 0-20 mA —
Maximum output current 20 mA 20 mA
Output accuracy ±0.5 % ±0.5 %
Resolution 12 bits 12 bits
Conversion 1 ms 300 μs
Protection type Integrated overvoltage Integrated overvoltage
Galvanic isolation No Yes (from other sections*)

Interface technical parameters

RS485 interface

Terminals RS485-A, RS485-B
Galvanic isolation Yes (basic)
Isolation voltage 1000 V
ESD protection ±15 kV
Communication speeds 2400 bps
4800 bps
9600 bps
19200 bps
38400 bps
57600 bps
115200 bps
Input impedance 12 kΩ
Input voltage hysteresis 70 mV
Output characteristic ±2.5 V
Terminating resistor Built-in attachable 120 Ω
(RS485-END)
RS485 pull-up / pull-down resistors 560 Ω / 560 Ω

Other I/O ports and interfaces (RPi3)

Ethernet port ETH 10/100 Mbit/s
USB port 4x USB 2.0
System storage Micro SD (max. 32 GB)

More parameters for Neuron models with GSM here.

Other I/O ports and interfaces (RPi4)

Ethernet port ETH 10/100/1000 Mbit/s
USB port 2x USB 3.0 + 2x USB 2.0
System storage Micro SD (max. 32 GB)